Defect depth profiling using photoluminescence and cathodoluminescence spectroscopy : The role of oxygen on reactive ion beam etching of GaN in O2/Ar plasmas
2000/7 J. T. Hsieh , J. M. Hwang, H. L. Hwang, O. Breitschadel and H. Schweizer- Conference papers (會議發表):
Defect depth profiling using photoluminescence and
cathodoluminescence spectroscopy : The role of oxygen on reactive ion beam
etching of GaN in O2/Ar plasmas, J.
T. Hsieh , J. M. Hwang, H. L. Hwang, O. Breitschadel
and H. Schweizer, ICSFS-10(International conference on solid films and
surfaces) , Princeton university july 9-13, 2000 (oral)
- download:
沒有留言:
張貼留言