Ohmic contact to p-type GaN using a novel Ni/Cu scheme

Ohmic contact to p-type GaN using a novel Ni/Cu scheme

2003/5 S.H. Liu, J.M. Hwang, Z.H. Hwang, W.H. Hung and H.L. Hwang

Abstract

In this paper, formation of low resistance ohmic contact to p-type GaN using an alloy of Ni/Cu was reported. The Mg doped samples were deposited with Ni (20 nm)/Cu (20 nm) and then annealed in nitrogen ambient at different annealing temperatures ranging from 400 to 700 8C. A good ohmic contact with a specific contact resistance of 1:31 10 4 O cm2 was obtained when the sample was annealed at 600 8C for 30 s. The decrease of specific contact resistance is attributed to the increased contact area and local electric field, and extraction of hydrogen from the p-type GaN.

Keywords: Ohmic contact; p-Type GaN; Ni/Cu ohmic contact; Metallization

•  Link:

http://www.sciencedirect.com/science/article/pii/S0169433203004707

• International Journals (國際期刊):

S.H. Liu, J.M. Hwang, Z.H. Hwang, W.H. Hung and H.L. Hwang , (2003/5), Ohmic contact to p-type GaN using a novel Ni/Cu scheme, Applied Surface Science, Volumes 212-213 , Pages 907-911 [SCI]

• download:

https://drive.google.com/file/d/0B-Jg2ZDReoWuQ3UwUUd4M0FaY2s/view?usp=sharing