Photoelectrochemical Etching of InxGa1-xN

Photoelectrochemical Etching of InxGa1-xN

2000/6 J.M. Hwang, J.T. Hsieh, C.Y. Ko, H.L. Hwang and W. H. Hung

Photoelectrochemical (PEC) etching of InxGa12xN in the KOH solution under illumination of a Hg-arc lamp is studied. An indium oxide surface layer is formed during PEC etching, which slows down the etching rate. The PEC etch rate of InxGa12xN is determined by dissolution of indium oxides into the solution. Increase of the solution temperature results in an increase of solubility of indium oxides and thus enhances the PEC etch rate. It is found that stirring the solution can accelerate indium oxides to dissolve into the solution and increase the etch rate. The thick indium oxide layer on the PEC-etched InxGa12xN surface can be effectively removed by the treatment of using a hot 6N HCl solution. A post-treatment by using a 3.2 M KOH solution can provide a smooth sidewall on the PEC-etched surface for the potential application to laser cavity.

•  Link:

http://scitation.aip.org/content/aip/journal/apl/76/26/10.1063/1.126820

• International Journals (國際期刊):

J.M. Hwang, J.T. Hsieh, C.Y. Ko, H.L. Hwang and W. H. Hung, (2000/6), Photoelectrochemical Etching of InxGa1-xN, Appl. Phys. Lett. 76, 3917, [SCI], NSC 88-2215-E-007-011.

• download:

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