Defect depth profiling using photoluminescence and cathodoluminescence spectroscopy : The role of oxygen on reactive ion beam etching of GaN in O2/Ar plasmas

Defect depth profiling using photoluminescence and cathodoluminescence spectroscopy : The role of oxygen on reactive ion beam etching of GaN in O2/Ar plasmas

2001/5 J.T. Hsieh, J.M. Hwang, H.L. Hwang , O. Breitschadel and H. Schweizer

•  Link:

http://www.sciencedirect.com/science/article/pii/S0169433201001040

• International Journals (國際期刊):

J.T. Hsieh, J.M. Hwang, H.L. Hwang , O. Breitschadel and H. Schweizer, (2001/5), Defect depth profiling using photoluminescence and cathodoluminescence spectroscopy : The role of oxygen on reactive ion beam etching of GaN in O2/Ar plasmas, Applied Surface Science Vol 175-176, pp 451-456, [SCI] , NSC 88-2215-E-007-011.

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