The activation of p-GaN by bias-assisted method at low temperature

The activation of p-GaN by bias-assisted method at low temperature

2004/3  J.M. HWANG, W. H. Hung and H.L. Hwang

• Conference papers (會議發表):

  The activation of p-GaN by bias-assisted method at low temperature, J.M. HWANG, W. H. Hung and H.L. Hwang, The International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED), Gyeongju, Korea, March 15 to 19, 2004 (oral)

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