Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors

Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors

2014/12 Wei-Chen Shen , Yung-Chi Yao, Zu-Po Yang, Pin-Guang Chen, Yung-An Hsieh , Ming-Han Liao, Min-Hung Lee , Mei-Tan Wang, Jung-Min Hwang,and Ya-Ju Lee

Abstract:
We report a novel monolithically integrated GaN-based light-emitting diode (LED) with metal-oxide-semiconductor field-effect transistor (MOSFET).The MOSFET is fabricated on the n-type GaN layer of the LED after dry etching, and connected to the LED. The monolithically exhibits good characteristics in the modulation of gate voltage and capability of driving injected current.
Index Terms—Intergrated optoelectronic curcuits,Light-emitting diodes, Semiconductor materials.

• Link:

http://optic2014.conf.tw/site/Page.aspx?pid=901&sid=1027&lang=en

• Conference papers (會議發表):

     Wei-Chen Shen , Yung-Chi Yao, Zu-Po Yang, Pin-Guang Chen, Yung-An Hsieh , Ming-Han Liao, Min-Hung Lee , Mei-Tan Wang, Jung-Min Hwang,and Ya-Ju Lee, Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors 「Optics & Photonics Taiwan,the International Conference (OPTIC)」,(OPTIC 2014),pp.S1003-O003,20141204

• download:

paper pdf: https://drive.google.com/file/d/0B-Jg2ZDReoWuWFZBVXBRa1hMc00/view?usp=sharing