Photoluminescence study on etch damage induced by photoelectrochemical etching of GaN

Photoluminescence study on etch damage induced by photoelectrochemical etching of GaN

1999/11  J.M. Hwang, J.T.Hsieh, H.L.Hwang and W. H. Hung

• Conference papers (會議發表):

             Photoluminescence study on etch damage induced by photoelectrochemical etching of GaN : A near damage-free etching process, J.M. Hwang, J.T.Hsieh, H.L.Hwang and W. H. Hung, Electron Devices and Material Symposium (EDMS), Chang Gung University ,Taiwan, ROC Nov 25-26, 1999, 中華民國電子材料與元件研討會論文集, p485 ~488 ( 1999)) (oral)

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