Monolithic integration of GaN-based lightemitting diodes and metal-oxide-semiconductor field-effect transistors

Monolithic integration of GaN-based lightemitting diodes and metal-oxide-semiconductor field-effect transistors

2014/10 Ya-Ju Lee, Zu-Po Yang,Pin-Guang Chen, Yung-An Hsieh,Yung-Chi Yao, Ming-Han Liao, Min-Hung Lee, Mei-Tan Wang, and Jung-Min Hwang

Abstract: In this study, we report a novel monolithically integrated GaNbased light-emitting diode (LED) with metal-oxide-semiconductor field effect transistor (MOSFET). Without additionally introducing complicated

epitaxial structures for transistors, the MOSFET is directly fabricated on the exposed n-type GaN layer of the LED after dry etching, and serially connected to the LED through standard semiconductor-manufacturing

technologies. Such monolithically integrated LED/MOSFET device is able to circumvent undesirable issues that might be faced by other kinds of integration schemes by growing a transistor on an LED or vice versa. For

the performances of resulting device, our monolithically integrated LED/MOSFET device exhibits good characteristics in the modulation of gate voltage and good capability of driving injected current, which are

essential for the important applications such as smart lighting, interconnection, and optical communication.

©2014 Optical Society of America

•  Link:

http://www.opticsinfobase.org/oe/abstract.cfm?uri=oe-22-S6-A1589

• International Journals (國際期刊):

Ya-Ju Lee, Zu-Po Yang,Pin-Guang Chen,Yung-An Hsieh,Yung-Chi Yao,Ming-Han Liao, Min-Hung Lee,Mei-Tan Wang,and Jung-Min Hwang, Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors, Optics Express, Vol 22, No S6, A1589, 2014/10

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