High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electronblocking layers

High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electronblocking layers2014/8 Ya-Ju Lee,Yung-Chi Yao,Chun-Ying Huang,Tai-Yuan Lin,Li-Lien Cheng,Ching-Yun Liu,Mei-Tan Wang,Jung-Min Hwang

Abstract: In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

•  Link:

http://link.springer.com/article/10.1186%2F1556-276X-9-433

• International Journals (國際期刊):

Ya-Ju Lee,Yung-Chi Yao,Chun-Ying Huang,Tai-Yuan Lin,Li-Lien Cheng,Ching-Yun Liu,Mei-Tan Wang,Jung-Min Hwang,High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electronblocking layers, Nanoscale Research Letter 2014,9:433

• download:

https://drive.google.com/file/d/0B-Jg2ZDReoWuWVptdDFfWDhnNnM/view?usp=sharing