GaN-Based LEDs With Al-Deposited V-Shaped Sapphire Facet Mirror

GaN-Based LEDs With Al-Deposited V-Shaped Sapphire Facet Mirror

2006/2 Lee, Y.J. J.M. Hwang, Hsu, T.C. Hsieh, M.H. Jou, M.J. Lee, B.J. Lu, T.C. Kuo, H.C. Wang, S.C

Abstract—A GaN-based light-emitting diodes (LEDs) with V-shaped sapphire facet reflector was fabricated using the double transferred scheme and sapphire chemical wet etching. The {1-102} R-plane V-shaped facet Reflector with a 57 against {0001} -axis has the superior capability for enhancing the light extraction efficiency. The light output power of the V-shaped sapphire facet reflector LED was 1.4 times higher than that of a flat reflector LED at an injection current of 20 mA. The significant improvement is attributable to the geometrical shape of sapphire facet reflector that efficiently redirects the guided light inside the chip toward to the top escape-cone of the LED surface.

Index Terms—GaN, light-emitting diode (LED), sapphire chemical wet etching.

•  Link:

http://ieeexplore.ieee.org/xpl/abstractAuthors.jsp?reload=true&arnumber=1597309

• International Journals (國際期刊):

Lee, Y.J. J.M. Hwang, Hsu, T.C. Hsieh, M.H. Jou, M.J. Lee, B.J. Lu, T.C. Kuo, H.C. Wang, S.C., ( 2006/2), GaN-Based LEDs With Al-Deposited V-Shaped Sapphire Facet Mirror, Photonics Technology Letters, IEEE, Vol 18, Issue 5, 724- 726

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