Enhanced Light Output in Roughened GaN-Based Light-Emitting Diodes Using Electrodeless Photoelectrochemical Etching

Enhanced Light Output in Roughened GaN-Based Light-Emitting Diodes Using Electrodeless Photoelectrochemical Etching

2006/12 S.C Hsu, C.Y. Lee; J.M. Hwang, J.Y. Su,. D.S.Wuu, R.H. Horng

Abstract—We have demonstrated enhanced output power from roughened GaN-based light-emitting diodes (LEDs) by using electrodeless photoelectrochemical etching with a chopped source (ELPEC-CS etching). It was found that the 20-mA output power of the ELPEC-CS treated LED (with roughened surfaces on the top p-type and bottom n-type GaN surface as well as the mesa sidewall) was 1.41 and 2.57 times as high as those LEDs with a roughened p-type GaN surface and a conventional surface, respectively. The light output pattern of the ELPEC-CS treated LED was five times greater than the conventional LED at 0 which was caused by the roughened GaN surface that improved the light extraction efficiency of the LED.

Index Terms—Gallium nitride (GaN), light-emitting diode (LED), light extraction, photoelectrochemical (PEC).

•  Link:

http://ieeexplore.ieee.org/xpl/abstractAuthors.jsp?arnumber=4014255

• International Journals (國際期刊):

S.C Hsu, C.Y. Lee; J.M. Hwang, J.Y. Su,. D.S.Wuu, R.H. Horng, (2006/12), Enhanced Light Output in Roughened GaN-Based Light-Emitting Diodes Using Electrodeless Photoelectrochemical Etching, , Photonics Technology Letters, IEEE, Vol 18, Issue 23, 2472-2474

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