Efficiency Enhancement of Light Extraction in LED with a Nano-Porous GaP Surface

Efficiency Enhancement of Light Extraction in LED with a Nano-Porous GaP Surface

2008/4 J. M. Hwang, W. H. Hung, and H. L. Hwang

Abstract

Electrodeless photoelectrochemical etching is developed to produce a nano-porous n-GaP surface. Pores of diameter 300-700 nm are distributed on the surface with a density 1.2 times 108 cm-2. Such a porous surface structure exhibits a short mean free path for the transport of visible light and enhances photon scattering in a red AlInGaP-based light-emitting device. The efficiency of extraction of light emitted from the active layer becomes about 30%-50% greater than that without an etching treatment at a current of 20-40 mA.

•  Link:

http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=4475233&url=http%3A%2F%2Fieeexplore.ieee.org%2Fiel5%2F68%2F4472037%2F04475233.pdf%3Farnumber%3D4475233

• International Journals (國際期刊):

J. M. Hwang, W. H. Hung, and H. L. Hwang, Efficiency Enhancement of Light Extraction in LED with a Nano-Porous GaP Surface, Photonics Technology Letters, IEEE, VOL. 20, NO. 8, 2008, 608-610

• download:

https://drive.google.com/file/d/0B-Jg2ZDReoWuajdtS2lGbmdBZG8/view?usp=sharing